Microsemi Corporation APT54GA60B
Product Information
Gate Charge:
158nC
Td (on/off) @ 25°C:
17ns/112ns
Detailed Description:
IGBT PT 600V 96A 416W Through Hole TO-247 [B]
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
96A
Series:
POWER MOS 8™
Vce(on) (Max) @ Vge, Ic:
2.5V @ 15V, 32A
Supplier Device Package:
TO-247 [B]
Manufacturer Standard Lead Time:
29 Weeks
Voltage - Collector Emitter Breakdown (Max):
600V
Packaging:
Tube
Switching Energy:
534µJ (on), 466µJ (off)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
416W
Input Type:
Standard
Package / Case:
TO-247-3
IGBT Type:
PT
Test Condition:
400V, 32A, 4.7Ohm, 15V
Current - Collector Pulsed (Icm):
161A
Manufacturer:
Microsemi Corporation
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Yes. We ship APT54GA60B Internationally to many countries around the world.
This is manufactured by Microsemi Corporation. The manufacturer part number is APT54GA60B. Features 158nc gate charge. Td (on/off) value of 17ns/112ns. It features igbt pt 600v 96a 416w through hole to-247 [b]. The product is available in through hole configuration. The maximum collector current includes 96a. The product power mos 8™, is a highly preferred choice for users. Features 2.5v @ 15v, 32a. to-247 [b] is the supplier device package value. It has typical 29 weeks of manufacturer standard lead time. The maximum collector emitter breakdown voltage of the product is 600v. In addition, tube is the available packaging type of the product. Provide switching energy up to 534µj (on), 466µj (off). The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 416w. It carries standard input type. Moreover, the product comes in to-247-3. Features an IGBT pt type. Test condition included 400v, 32a, 4.7ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The microsemi corporation's product offers user-desired applications.
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