Microsemi Corporation APT25GP120BDQ1G
Product Information
Gate Charge:
110nC
Td (on/off) @ 25°C:
12ns/70ns
Detailed Description:
IGBT PT 1200V 69A 417W Through Hole TO-247 [B]
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
69A
Series:
POWER MOS 7®
Vce(on) (Max) @ Vge, Ic:
3.9V @ 15V, 25A
Supplier Device Package:
TO-247 [B]
Manufacturer Standard Lead Time:
32 Weeks
Voltage - Collector Emitter Breakdown (Max):
1200V
Packaging:
Tube
Switching Energy:
500µJ (on), 440µJ (off)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
417W
Input Type:
Standard
Package / Case:
TO-247-3
IGBT Type:
PT
Test Condition:
600V, 25A, 5Ohm, 15V
Current - Collector Pulsed (Icm):
90A
Manufacturer:
Microsemi Corporation
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Yes. Our products in Transistors - IGBTs - Single category are shipped in lowest possible time.
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This is manufactured by Microsemi Corporation. The manufacturer part number is APT25GP120BDQ1G. Features 110nc gate charge. Td (on/off) value of 12ns/70ns. It features igbt pt 1200v 69a 417w through hole to-247 [b]. The product is available in through hole configuration. The maximum collector current includes 69a. The product power mos 7®, is a highly preferred choice for users. Features 3.9v @ 15v, 25a. to-247 [b] is the supplier device package value. It has typical 32 weeks of manufacturer standard lead time. The maximum collector emitter breakdown voltage of the product is 1200v. In addition, tube is the available packaging type of the product. Provide switching energy up to 500µj (on), 440µj (off). The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 417w. It carries standard input type. Moreover, the product comes in to-247-3. Features an IGBT pt type. Test condition included 600v, 25a, 5ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The microsemi corporation's product offers user-desired applications.
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