Microsemi Corporation APT50GR120B2
Product Information
Gate Charge:
445nC
Td (on/off) @ 25°C:
28ns/237ns
Detailed Description:
IGBT NPT 1200V 117A 694W Through Hole TO-247
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
117A
Vce(on) (Max) @ Vge, Ic:
3.2V @ 15V, 50A
Supplier Device Package:
TO-247
Manufacturer Standard Lead Time:
19 Weeks
Voltage - Collector Emitter Breakdown (Max):
1200V
Packaging:
Tube
Switching Energy:
2.14mJ (on), 1.48mJ (off)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
694W
Input Type:
Standard
Package / Case:
TO-247-3
IGBT Type:
NPT
Test Condition:
600V, 50A, 4.3Ohm, 15V
Current - Collector Pulsed (Icm):
200A
Manufacturer:
Microsemi Corporation
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Yes. We ship APT50GR120B2 Internationally to many countries around the world.
This is manufactured by Microsemi Corporation. The manufacturer part number is APT50GR120B2. Features 445nc gate charge. Td (on/off) value of 28ns/237ns. It features igbt npt 1200v 117a 694w through hole to-247. The product is available in through hole configuration. The maximum collector current includes 117a. Features 3.2v @ 15v, 50a. to-247 is the supplier device package value. It has typical 19 weeks of manufacturer standard lead time. The maximum collector emitter breakdown voltage of the product is 1200v. In addition, tube is the available packaging type of the product. Provide switching energy up to 2.14mj (on), 1.48mj (off). The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 694w. It carries standard input type. Moreover, the product comes in to-247-3. Features an IGBT npt type. Test condition included 600v, 50a, 4.3ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The microsemi corporation's product offers user-desired applications.
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