Rohm Semiconductor RGT8NS65DGTL

RGT8NS65DGTL Rohm Semiconductor
Rohm Semiconductor

Product Information

Gate Charge:
13.5nC
Td (on/off) @ 25°C:
17ns/69ns
Detailed Description:
IGBT Trench Field Stop 650V 8A 65W Surface Mount LPDS (TO-263S)
Reverse Recovery Time (trr):
40ns
Mounting Type:
Surface Mount
Current - Collector (Ic) (Max):
8A
Vce(on) (Max) @ Vge, Ic:
2.1V @ 15V, 4A
Supplier Device Package:
LPDS (TO-263S)
Manufacturer Standard Lead Time:
17 Weeks
Voltage - Collector Emitter Breakdown (Max):
650V
Packaging:
Cut Tape (CT)
Operating Temperature:
-40°C ~ 175°C (TJ)
Power - Max:
65W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IGBT Type:
Trench Field Stop
Test Condition:
400V, 4A, 50Ohm, 15V
Current - Collector Pulsed (Icm):
12A
Manufacturer:
Rohm Semiconductor
Checking for live stock

This is manufactured by Rohm Semiconductor. The manufacturer part number is RGT8NS65DGTL. Features 13.5nc gate charge. Td (on/off) value of 17ns/69ns. It features igbt trench field stop 650v 8a 65w surface mount lpds (to-263s). It has a trr (reverse recovery time) of 40ns. The product is available in surface mount configuration. The maximum collector current includes 8a. Features 2.1v @ 15v, 4a. lpds (to-263s) is the supplier device package value. It has typical 17 weeks of manufacturer standard lead time. The maximum collector emitter breakdown voltage of the product is 650v. In addition, cut tape (ct) is the available packaging type of the product. The product has -40°c ~ 175°c (tj) operating temperature range. The maximum power of the product is 65w. It carries standard input type. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. Features an IGBT trench field stop type. Test condition included 400v, 4a, 50ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The rohm semiconductor's product offers user-desired applications.

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TO-252-Ag-IGBT Constitution Material List(Environmental Information)
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IGBT Whisker Info(Environmental Information)
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IGBT Level 1 MSL(Environmental Information)
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RGTYYY 01/JAN/2020(PCN Assembly/Origin)
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TO- 263S IGBT Taping Spec(Datasheets)
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TO-262 IGBT2chip Inner Structure(Other Related Documents)
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TO-263S IGBT Part Marking(Other Related Documents)
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IGBT-SMD Reliability Test(Other Related Documents)
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IGBT Flammability(Other Related Documents)

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