Deliver to
United Kingdom
This is manufactured by Rohm Semiconductor. The manufacturer part number is RGT8NS65DGTL. Features 13.5nc gate charge. Td (on/off) value of 17ns/69ns. It features igbt trench field stop 650v 8a 65w surface mount lpds (to-263s). It has a trr (reverse recovery time) of 40ns. The product is available in surface mount configuration. The maximum collector current includes 8a. Features 2.1v @ 15v, 4a. lpds (to-263s) is the supplier device package value. It has typical 17 weeks of manufacturer standard lead time. The maximum collector emitter breakdown voltage of the product is 650v. In addition, cut tape (ct) is the available packaging type of the product. The product has -40°c ~ 175°c (tj) operating temperature range. The maximum power of the product is 65w. It carries standard input type. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. Features an IGBT trench field stop type. Test condition included 400v, 4a, 50ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The rohm semiconductor's product offers user-desired applications.
For more information please check the datasheets.
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