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This is manufactured by ON Semiconductor. The manufacturer part number is NGTB25N120SWG. The given dimensions of the product include 16.25 x 5.3 x 21.4mm. The product is available in through hole configuration. Provides up to 385 w maximum power dissipation. Whereas features a 1200 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 50 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-247. Whereas, the minimum operating temperature of the product is -55 °c. It has about 1mhz switching speed . It has approximately 4420pf gate capacitance . It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 50a. It features igbt trench 1200v 50a 385w through hole to-247. Features 2.4v @ 15v, 25a. Td (on/off) value of 87ns/179ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3. Features 178nc gate charge. Base Part Number: ngtb25. The maximum collector emitter breakdown voltage of the product is 1200v. It has a trr (reverse recovery time) of 154ns. Provide switching energy up to 1.95mj (on), 600µj (off). Test condition included 600v, 25a, 10ohm, 15v. The on semiconductor's product offers user-desired applications. Features an IGBT trench type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-247 is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 385w.
For more information please check the datasheets.
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