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ON Semiconductor NGTB03N60R2DT4G

NGTB03N60R2DT4G ON Semiconductor
NGTB03N60R2DT4G
NGTB03N60R2DT4G
ON Semiconductor

Product Information

Maximum Continuous Collector Current:
9 A
Dimensions:
6.73 x 6.22 x 2.38mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
49 W
Maximum Operating Temperature:
+175 °C
Maximum Collector Emitter Voltage:
600 V
Height:
2.38mm
Width:
6.22mm
Length:
6.73mm
Maximum Gate Emitter Voltage:
±20V
Package Type:
DPAK (TO-252)
Switching Speed:
1MHz
Channel Type:
N
Gate Capacitance:
415pF
Pin Count:
3
Transistor Configuration:
Single
Gate Charge:
17nC
Base Part Number:
NGTB03
Detailed Description:
IGBT 600V 9A 49W Surface Mount DPAK
Reverse Recovery Time (trr):
65ns
Mounting Type:
Surface Mount
Current - Collector (Ic) (Max):
9A
Vce(on) (Max) @ Vge, Ic:
2.1V @ 15V, 3A
Operating Temperature:
175°C (TJ)
Supplier Device Package:
DPAK
Packaging:
Cut Tape (CT)
Switching Energy:
50µJ (on), 27µJ (off)
Td (on/off) @ 25°C:
27ns/59ns
Power - Max:
49W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Voltage - Collector Emitter Breakdown (Max):
600V
Test Condition:
300V, 3A, 30Ohm, 15V
Current - Collector Pulsed (Icm):
12A
Manufacturer:
ON Semiconductor
RoHs Compliant
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is NGTB03N60R2DT4G. The product has a maximum 9 a continuous collector current . The given dimensions of the product include 6.73 x 6.22 x 2.38mm. The product is available in surface mount configuration. Provides up to 49 w maximum power dissipation. It has a maximum operating temperature of +175 °c. Whereas features a 600 v of collector emitter voltage (max). In addition, the height is 2.38mm. Furthermore, the product is 6.22mm wide. Its accurate length is 6.73mm. It offers a maximum ±20v gate emitter voltage . The package is a sort of dpak (to-252). It has about 1mhz switching speed . The product is available in [Cannel Type] channel. It has approximately 415pf gate capacitance . It contains 3 pins. The product offers single transistor configuration. Features 17nc gate charge. Base Part Number: ngtb03. It features igbt 600v 9a 49w surface mount dpak. It has a trr (reverse recovery time) of 65ns. The maximum collector current includes 9a. Features 2.1v @ 15v, 3a. The product has 175°c (tj) operating temperature range. dpak is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. Provide switching energy up to 50µj (on), 27µj (off). Td (on/off) value of 27ns/59ns. The maximum power of the product is 49w. It carries standard input type. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. The maximum collector emitter breakdown voltage of the product is 600v. Test condition included 300v, 3a, 30ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Mult Dev EOL 7/Apr/2021(PCN Obsolescence/ EOL)
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NGTB03N60R2DT4G(Datasheets)

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We use our internationally recognized delivery partners UPS/DHL. Collection of ET11176102 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11176102.
Yes. We ship NGTB03N60R2DT4G Internationally to many countries around the world.