Microsemi Corporation APT85GR120B2
Product Information
Gate Charge:
660nC
Td (on/off) @ 25°C:
43ns/300ns
Detailed Description:
IGBT NPT 1200V 170A 962W Through Hole T-MAX™
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
170A
Vce(on) (Max) @ Vge, Ic:
3.2V @ 15V, 85A
Supplier Device Package:
T-MAX™
Manufacturer Standard Lead Time:
19 Weeks
Voltage - Collector Emitter Breakdown (Max):
1200V
Packaging:
Tube
Switching Energy:
6mJ (on), 3.8mJ (off)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
962W
Input Type:
Standard
Package / Case:
TO-247-3
IGBT Type:
NPT
Test Condition:
600V, 85A, 4.3Ohm, 15V
Current - Collector Pulsed (Icm):
340A
Manufacturer:
Microsemi Corporation
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Yes. We ship APT85GR120B2 Internationally to many countries around the world.
This is manufactured by Microsemi Corporation. The manufacturer part number is APT85GR120B2. Features 660nc gate charge. Td (on/off) value of 43ns/300ns. It features igbt npt 1200v 170a 962w through hole t-max™. The product is available in through hole configuration. The maximum collector current includes 170a. Features 3.2v @ 15v, 85a. t-max™ is the supplier device package value. It has typical 19 weeks of manufacturer standard lead time. The maximum collector emitter breakdown voltage of the product is 1200v. In addition, tube is the available packaging type of the product. Provide switching energy up to 6mj (on), 3.8mj (off). The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 962w. It carries standard input type. Moreover, the product comes in to-247-3. Features an IGBT npt type. Test condition included 600v, 85a, 4.3ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The microsemi corporation's product offers user-desired applications.
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