Renesas Electronics America RJH1CV6DPK-00#T0
Product Information
Gate Charge:
105nC
Td (on/off) @ 25°C:
46ns/125ns
Detailed Description:
IGBT Trench 1200V 60A 290W Through Hole TO-3P
Reverse Recovery Time (trr):
180ns
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
60A
Vce(on) (Max) @ Vge, Ic:
2.6V @ 15V, 30A
Supplier Device Package:
TO-3P
Voltage - Collector Emitter Breakdown (Max):
1200V
Packaging:
Tube
Switching Energy:
2.3mJ (on), 1.7mJ (off)
Operating Temperature:
150°C (TJ)
Power - Max:
290W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-3P-3, SC-65-3
IGBT Type:
Trench
Test Condition:
600V, 30A, 5Ohm, 15V
Manufacturer:
Renesas Electronics America
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Yes. Our products in Transistors - IGBTs - Single category are shipped in lowest possible time.
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This is manufactured by Renesas Electronics America. The manufacturer part number is RJH1CV6DPK-00#T0. Features 105nc gate charge. Td (on/off) value of 46ns/125ns. It features igbt trench 1200v 60a 290w through hole to-3p. It has a trr (reverse recovery time) of 180ns. The product is available in through hole configuration. The maximum collector current includes 60a. Features 2.6v @ 15v, 30a. to-3p is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 1200v. In addition, tube is the available packaging type of the product. Provide switching energy up to 2.3mj (on), 1.7mj (off). The product has 150°c (tj) operating temperature range. The maximum power of the product is 290w. It carries standard input type. Moreover, the product comes in to-3p-3, sc-65-3. Features an IGBT trench type. Test condition included 600v, 30a, 5ohm, 15v. The renesas electronics america's product offers user-desired applications.
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