Maximum Continuous Collector Current:
100 A
Dimensions:
16.26 x 5.3 x 21.08mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
595 W
Maximum Operating Temperature:
+175 °C
Maximum Collector Emitter Voltage:
650 V
Channel Type:
N
Width:
5.3mm
Length:
16.26mm
Maximum Gate Emitter Voltage:
±20 V, ±30 V
Package Type:
TO-247
Minimum Operating Temperature:
-55 °C
Height:
21.08mm
Gate Capacitance:
7193pF
Pin Count:
3
Energy Rating:
3.1mJ
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
36 Weeks
Current - Collector (Ic) (Max):
100A
Detailed Description:
IGBT Field Stop 650V 100A 595W Through Hole TO-247-3
Vce(on) (Max) @ Vge, Ic:
2V @ 15V, 60A
Td (on/off) @ 25°C:
117ns/265ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Type:
Standard
Package / Case:
TO-247-3
Gate Charge:
318nC
Base Part Number:
NGTB60
Voltage - Collector Emitter Breakdown (Max):
650V
Reverse Recovery Time (trr):
96ns
Switching Energy:
1.59mJ (on), 660µJ (off)
Test Condition:
400V, 60A, 10Ohm, 15V
Manufacturer:
ON Semiconductor
IGBT Type:
Field Stop
Current - Collector Pulsed (Icm):
240A
Mounting Type:
Through Hole
Supplier Device Package:
TO-247-3
Packaging:
Tube
Power - Max:
595W
Customer Reference:
