ON Semiconductor NGTB60N65FL2WG
Product Information
Maximum Continuous Collector Current:
100 A
Dimensions:
16.26 x 5.3 x 21.08mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
595 W
Maximum Operating Temperature:
+175 °C
Maximum Collector Emitter Voltage:
650 V
Channel Type:
N
Width:
5.3mm
Length:
16.26mm
Maximum Gate Emitter Voltage:
±20 V, ±30 V
Package Type:
TO-247
Minimum Operating Temperature:
-55 °C
Height:
21.08mm
Gate Capacitance:
7193pF
Pin Count:
3
Energy Rating:
3.1mJ
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
36 Weeks
Current - Collector (Ic) (Max):
100A
Detailed Description:
IGBT Field Stop 650V 100A 595W Through Hole TO-247-3
Vce(on) (Max) @ Vge, Ic:
2V @ 15V, 60A
Td (on/off) @ 25°C:
117ns/265ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Type:
Standard
Package / Case:
TO-247-3
Gate Charge:
318nC
Base Part Number:
NGTB60
Voltage - Collector Emitter Breakdown (Max):
650V
Reverse Recovery Time (trr):
96ns
Switching Energy:
1.59mJ (on), 660µJ (off)
Test Condition:
400V, 60A, 10Ohm, 15V
Manufacturer:
ON Semiconductor
IGBT Type:
Field Stop
Current - Collector Pulsed (Icm):
240A
Mounting Type:
Through Hole
Supplier Device Package:
TO-247-3
Packaging:
Tube
Power - Max:
595W
Customer Reference:
Checking for live stock
FAQs
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Yes. We ship NGTB60N65FL2WG Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is NGTB60N65FL2WG. The product has a maximum 100 a continuous collector current . The given dimensions of the product include 16.26 x 5.3 x 21.08mm. The product is available in through hole configuration. Provides up to 595 w maximum power dissipation. It has a maximum operating temperature of +175 °c. Whereas features a 650 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. Furthermore, the product is 5.3mm wide. Its accurate length is 16.26mm. It offers a maximum ±20 v, ±30 v gate emitter voltage . The package is a sort of to-247. Whereas, the minimum operating temperature of the product is -55 °c. In addition, the height is 21.08mm. It has approximately 7193pf gate capacitance . It contains 3 pins. It has approximately 3.1mj energy rating . The product offers single transistor configuration. It has typical 36 weeks of manufacturer standard lead time. The maximum collector current includes 100a. It features igbt field stop 650v 100a 595w through hole to-247-3. Features 2v @ 15v, 60a. Td (on/off) value of 117ns/265ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3. Features 318nc gate charge. Base Part Number: ngtb60. The maximum collector emitter breakdown voltage of the product is 650v. It has a trr (reverse recovery time) of 96ns. Provide switching energy up to 1.59mj (on), 660µj (off). Test condition included 400v, 60a, 10ohm, 15v. The on semiconductor's product offers user-desired applications. Features an IGBT field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-247-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 595w.
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