ON Semiconductor NGTB25N120FLWG
Product Information
Dimensions:
16.26 x 5.3 x 21.08mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
192 W
Maximum Continuous Collector Current:
50 A
Maximum Collector Emitter Voltage:
1200 V
Height:
21.08mm
Width:
5.3mm
Length:
16.26mm
Maximum Gate Emitter Voltage:
±20V
Package Type:
TO-247
Minimum Operating Temperature:
-55 °C
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
50A
Detailed Description:
IGBT Trench Field Stop 1200V 50A 192W Through Hole TO-247
Vce(on) (Max) @ Vge, Ic:
2.2V @ 15V, 25A
Td (on/off) @ 25°C:
91ns/228ns
Operating Temperature:
-55°C ~ 150°C (TJ)
Input Type:
Standard
Package / Case:
TO-247-3
Gate Charge:
220nC
Base Part Number:
NGTB25
Voltage - Collector Emitter Breakdown (Max):
1200V
Reverse Recovery Time (trr):
240ns
Switching Energy:
1.5mJ (on), 950µJ (off)
Test Condition:
600V, 25A, 10Ohm, 15V
Manufacturer:
ON Semiconductor
IGBT Type:
Trench Field Stop
Current - Collector Pulsed (Icm):
200A
Mounting Type:
Through Hole
Supplier Device Package:
TO-247
Packaging:
Tube
Power - Max:
192W
Customer Reference:
Checking for live stock
FAQs
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Yes. We ship NGTB25N120FLWG Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is NGTB25N120FLWG. The given dimensions of the product include 16.26 x 5.3 x 21.08mm. The product is available in through hole configuration. Provides up to 192 w maximum power dissipation. The product has a maximum 50 a continuous collector current . Whereas features a 1200 v of collector emitter voltage (max). In addition, the height is 21.08mm. Furthermore, the product is 5.3mm wide. Its accurate length is 16.26mm. It offers a maximum ±20v gate emitter voltage . The package is a sort of to-247. Whereas, the minimum operating temperature of the product is -55 °c. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 50a. It features igbt trench field stop 1200v 50a 192w through hole to-247. Features 2.2v @ 15v, 25a. Td (on/off) value of 91ns/228ns. The product has -55°c ~ 150°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3. Features 220nc gate charge. Base Part Number: ngtb25. The maximum collector emitter breakdown voltage of the product is 1200v. It has a trr (reverse recovery time) of 240ns. Provide switching energy up to 1.5mj (on), 950µj (off). Test condition included 600v, 25a, 10ohm, 15v. The on semiconductor's product offers user-desired applications. Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-247 is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 192w.
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