Microsemi Corporation APT65GP60L2DQ2G
Product Information
Gate Charge:
210nC
Td (on/off) @ 25°C:
30ns/90ns
Detailed Description:
IGBT PT 600V 198A 833W Through Hole
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
198A
Series:
POWER MOS 7®
Vce(on) (Max) @ Vge, Ic:
2.7V @ 15V, 65A
Voltage - Collector Emitter Breakdown (Max):
600V
Packaging:
Tube
Switching Energy:
605µJ (on), 895µJ (off)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
833W
Input Type:
Standard
Package / Case:
TO-264-3, TO-264AA
IGBT Type:
PT
Test Condition:
400V, 65A, 5Ohm, 15V
Current - Collector Pulsed (Icm):
250A
Manufacturer:
Microsemi Corporation
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Yes. Our products in Transistors - IGBTs - Single category are shipped in lowest possible time.
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Yes. We ship APT65GP60L2DQ2G Internationally to many countries around the world.
This is manufactured by Microsemi Corporation. The manufacturer part number is APT65GP60L2DQ2G. Features 210nc gate charge. Td (on/off) value of 30ns/90ns. It features igbt pt 600v 198a 833w through hole. The product is available in through hole configuration. The maximum collector current includes 198a. The product power mos 7®, is a highly preferred choice for users. Features 2.7v @ 15v, 65a. The maximum collector emitter breakdown voltage of the product is 600v. In addition, tube is the available packaging type of the product. Provide switching energy up to 605µj (on), 895µj (off). The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 833w. It carries standard input type. Moreover, the product comes in to-264-3, to-264aa. Features an IGBT pt type. Test condition included 400v, 65a, 5ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The microsemi corporation's product offers user-desired applications.
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