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This is manufactured by ON Semiconductor. The manufacturer part number is NGTB40N120S3WG. The given dimensions of the product include 16.25 x 5.3 x 21.34mm. The product is available in through hole configuration. Provides up to 454 w maximum power dissipation. Whereas features a 1200 v of collector emitter voltage (max). It has 1 transistors . The product is available in [Cannel Type] channel. The product has a maximum 160 a continuous collector current . It offers a maximum ±30v gate emitter voltage . The package is a sort of to-247. Whereas, the minimum operating temperature of the product is -55 °c. It has approximately 4912pf gate capacitance . It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers common emitter transistor configuration. The maximum collector current includes 160a. It features igbt trench field stop 1200v 160a 454w through hole to-247. Features 1.95v @ 15v, 40a. Td (on/off) value of 12ns/145ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3. Features 212nc gate charge. Base Part Number: ngtb40. The maximum collector emitter breakdown voltage of the product is 1200v. It has a trr (reverse recovery time) of 163ns. Provide switching energy up to 2.2mj (on), 1.1mj (off). Test condition included 600v, 40a, 10ohm, 15v. The on semiconductor's product offers user-desired applications. Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-247 is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 454w.
For more information please check the datasheets.
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