ON Semiconductor NGTB40N120S3WG
Product Information
Dimensions:
16.25 x 5.3 x 21.34mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
454 W
Maximum Collector Emitter Voltage:
1200 V
Number of Transistors:
1
Channel Type:
N
Maximum Continuous Collector Current:
160 A
Maximum Gate Emitter Voltage:
±30V
Package Type:
TO-247
Minimum Operating Temperature:
-55 °C
Gate Capacitance:
4912pF
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Common Emitter
Current - Collector (Ic) (Max):
160A
Detailed Description:
IGBT Trench Field Stop 1200V 160A 454W Through Hole TO-247
Vce(on) (Max) @ Vge, Ic:
1.95V @ 15V, 40A
Td (on/off) @ 25°C:
12ns/145ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Type:
Standard
Package / Case:
TO-247-3
Gate Charge:
212nC
Base Part Number:
NGTB40
Voltage - Collector Emitter Breakdown (Max):
1200V
Reverse Recovery Time (trr):
163ns
Switching Energy:
2.2mJ (on), 1.1mJ (off)
Test Condition:
600V, 40A, 10Ohm, 15V
Manufacturer:
ON Semiconductor
IGBT Type:
Trench Field Stop
Current - Collector Pulsed (Icm):
160A
Mounting Type:
Through Hole
Supplier Device Package:
TO-247
Packaging:
Tube
Power - Max:
454W
Customer Reference:
Checking for live stock
FAQs
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Yes. We ship NGTB40N120S3WG Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is NGTB40N120S3WG. The given dimensions of the product include 16.25 x 5.3 x 21.34mm. The product is available in through hole configuration. Provides up to 454 w maximum power dissipation. Whereas features a 1200 v of collector emitter voltage (max). It has 1 transistors . The product is available in [Cannel Type] channel. The product has a maximum 160 a continuous collector current . It offers a maximum ±30v gate emitter voltage . The package is a sort of to-247. Whereas, the minimum operating temperature of the product is -55 °c. It has approximately 4912pf gate capacitance . It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers common emitter transistor configuration. The maximum collector current includes 160a. It features igbt trench field stop 1200v 160a 454w through hole to-247. Features 1.95v @ 15v, 40a. Td (on/off) value of 12ns/145ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3. Features 212nc gate charge. Base Part Number: ngtb40. The maximum collector emitter breakdown voltage of the product is 1200v. It has a trr (reverse recovery time) of 163ns. Provide switching energy up to 2.2mj (on), 1.1mj (off). Test condition included 600v, 40a, 10ohm, 15v. The on semiconductor's product offers user-desired applications. Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-247 is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 454w.
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