PN Junction Semiconductor P1H06300D8
Product Information
FET Feature:
-
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs:
1.3V @ 1mA
REACH Status:
REACH Affected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
+10V, -20V
Power Dissipation (Max):
55.5W
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
DFN8*8
Current - Continuous Drain (Id) @ 25°C:
10A
Technology:
GaNFET (Gallium Nitride)
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FAQs
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Yes. Our products in Transistors - FETs, MOSFETs - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of PN Junction Semiconductor P1H06300D8. You can also check on our website or by contacting our customer support team for further order details on PN Junction Semiconductor P1H06300D8.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET22975826 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "PN Junction Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET22975826.
Yes. We ship P1H06300D8 Internationally to many countries around the world.
This is manufactured by PN Junction Semiconductor. The manufacturer part number is P1H06300D8. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. It has a maximum Rds On and voltage of 1.3v @ 1ma. In addition, it is reach affected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 6v. It is shipped in tape & reel (tr) package . The product has a 650 v drain to source voltage. The maximum Vgs rate is +10v, -20v. The product carries maximum power dissipation 55.5w. The product is available in surface mount configuration. dfn8*8 is the supplier device package value. The continuous current drain at 25°C is 10a. This product use ganfet (gallium nitride) technology.
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