Fairchild Semiconductor SI3443DV
Product Information
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Gate Charge (Qg) (Max) @ Vgs:
15 nC @ 4.5 V
Rds On (Max) @ Id, Vgs:
65mOhm @ 4.4A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Package:
Bulk
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±12V
Power Dissipation (Max):
2W (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
1079 pF @ 10 V
Mounting Type:
Surface Mount
Series:
HEXFET®
Supplier Device Package:
Micro6™(TSOP-6)
Current - Continuous Drain (Id) @ 25°C:
4.4A (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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Yes. We ship SI3443DV Internationally to many countries around the world.
This is manufactured by Fairchild Semiconductor. The manufacturer part number is SI3443DV. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sot-23-6 thin, tsot-23-6. The maximum gate charge and given voltages include 15 nc @ 4.5 v. It has a maximum Rds On and voltage of 65mohm @ 4.4a, 4.5v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 2.5v, 4.5v. It is shipped in bulk package . The product has a 20 v drain to source voltage. The maximum Vgs rate is ±12v. The product carries maximum power dissipation 2w (ta). The product's input capacitance at maximum includes 1079 pf @ 10 v. The product is available in surface mount configuration. The product hexfet®, is a highly preferred choice for users. micro6™(tsop-6) is the supplier device package value. The continuous current drain at 25°C is 4.4a (ta). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
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