NXP USA Inc. PMZB350UPE,315
Product Information
FET Feature:
-
HTSUS:
0000.00.0000
Vgs(th) (Max) @ Id:
950mV @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
3-XFDFN
Rds On (Max) @ Id, Vgs:
450mOhm @ 300mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
1.9 nC @ 4.5 V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Package:
Bulk
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±8V
Power Dissipation (Max):
360mW (Ta), 3.125W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
127 pF @ 10 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
DFN1006B-3
Current - Continuous Drain (Id) @ 25°C:
1A (Ta)
Technology:
MOSFET (Metal Oxide)
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FAQs
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Yes. We ship PMZB350UPE,315 Internationally to many countries around the world.
This is manufactured by NXP USA Inc.. The manufacturer part number is PMZB350UPE,315. It is assigned with possible HTSUS value of 0000.00.0000. The typical Vgs (th) (max) of the product is 950mv @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 3-xfdfn. It has a maximum Rds On and voltage of 450mohm @ 300ma, 4.5v. The maximum gate charge and given voltages include 1.9 nc @ 4.5 v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.8v, 4.5v. It is shipped in bulk package . The product has a 20 v drain to source voltage. The maximum Vgs rate is ±8v. The product carries maximum power dissipation 360mw (ta), 3.125w (tc). The product's input capacitance at maximum includes 127 pf @ 10 v. The product is available in surface mount configuration. dfn1006b-3 is the supplier device package value. The continuous current drain at 25°C is 1a (ta). This product use mosfet (metal oxide) technology.
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