NXP Semiconductors PMPB15XN,115
Product Information
FET Feature:
-
HTSUS:
0000.00.0000
Vgs(th) (Max) @ Id:
900mV @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-XFDFN Exposed Pad
Gate Charge (Qg) (Max) @ Vgs:
20.2 nC @ 4.5 V
Rds On (Max) @ Id, Vgs:
21mOhm @ 7.3A, 4.5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Package:
Bulk
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
1240 pF @ 10 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
DFN1010B-6
Current - Continuous Drain (Id) @ 25°C:
7.3A (Ta)
Power Dissipation (Max):
1.7W (Ta), 12.5W (Tc)
Technology:
MOSFET (Metal Oxide)
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FAQs
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Yes. We ship PMPB15XN,115 Internationally to many countries around the world.
This is manufactured by NXP Semiconductors. The manufacturer part number is PMPB15XN,115. It is assigned with possible HTSUS value of 0000.00.0000. The typical Vgs (th) (max) of the product is 900mv @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-xfdfn exposed pad. The maximum gate charge and given voltages include 20.2 nc @ 4.5 v. It has a maximum Rds On and voltage of 21mohm @ 7.3a, 4.5v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.8v, 4.5v. It is shipped in bulk package . The product has a 20 v drain to source voltage. The maximum Vgs rate is ±12v. The product's input capacitance at maximum includes 1240 pf @ 10 v. The product is available in surface mount configuration. dfn1010b-6 is the supplier device package value. The continuous current drain at 25°C is 7.3a (ta). The product carries maximum power dissipation 1.7w (ta), 12.5w (tc). This product use mosfet (metal oxide) technology.
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