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United Kingdom
This is manufactured by NXP USA Inc.. The manufacturer part number is PHB18NQ10T,118. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 1ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. The maximum gate charge and given voltages include 21 nc @ 10 v. It has a maximum Rds On and voltage of 90mohm @ 9a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 79w (tc). The product's input capacitance at maximum includes 633 pf @ 25 v. The product is available in surface mount configuration. The product trenchmos™, is a highly preferred choice for users. d2pak is the supplier device package value. The continuous current drain at 25°C is 18a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
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