NXP USA Inc. PH1225AL,115

PH1225AL-115 NXP USA Inc. PH1225AL,115
NXP USA Inc.

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.15V @ 1mA
Operating Temperature:
-
Package / Case:
SOT-1023, 4-LFPAK
Gate Charge (Qg) (Max) @ Vgs:
105 nC @ 10 V
Rds On (Max) @ Id, Vgs:
1.2mOhm @ 15A, 10V
FET Type:
N-Channel
Package:
Bulk
Drain to Source Voltage (Vdss):
25 V
Power Dissipation (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
6380 pF @ 12 V
Mounting Type:
Surface Mount
Series:
TrenchMOS™
Supplier Device Package:
LFPAK56; Power-SO8
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by NXP USA Inc.. The manufacturer part number is PH1225AL,115. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.15v @ 1ma. Moreover, the product comes in sot-1023, 4-lfpak. The maximum gate charge and given voltages include 105 nc @ 10 v. It has a maximum Rds On and voltage of 1.2mohm @ 15a, 10v. It carries FET type n-channel. It is shipped in bulk package . The product has a 25 v drain to source voltage. The product's input capacitance at maximum includes 6380 pf @ 12 v. The product is available in surface mount configuration. The product trenchmos™, is a highly preferred choice for users. lfpak56; power-so8 is the supplier device package value. The continuous current drain at 25°C is 100a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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