Fairchild Semiconductor HUFA75645S3S

HUFA75645S3S Fairchild Semiconductor
Fairchild Semiconductor

Product Information

FET Feature:
-
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
238 nC @ 20 V
Rds On (Max) @ Id, Vgs:
14mOhm @ 75A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Power Dissipation (Max):
310W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
3790 pF @ 25 V
Mounting Type:
Surface Mount
Series:
UltraFET™
Supplier Device Package:
TO-263 (D2PAK)
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Fairchild Semiconductor. The manufacturer part number is HUFA75645S3S. It is assigned with possible HTSUS value of 8542.39.0001. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. The maximum gate charge and given voltages include 238 nc @ 20 v. It has a maximum Rds On and voltage of 14mohm @ 75a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 310w (tc). The product's input capacitance at maximum includes 3790 pf @ 25 v. The product is available in surface mount configuration. The product ultrafet™, is a highly preferred choice for users. to-263 (d2pak) is the supplier device package value. The continuous current drain at 25°C is 75a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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