Fairchild Semiconductor FQB6N40CTM
Product Information
The FQB6N40CTM is a high-performance N-channel MOSFET manufactured by Fairchild Semiconductor, offering exceptional power handling capabilities. Its low on-resistance and advanced design enable efficient power switching and amplification in various industrial and automotive applications.
FET Feature:
-
HTSUS:
0000.00.0000
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
20 nC @ 10 V
Rds On (Max) @ Id, Vgs:
1Ohm @ 3A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
400 V
Vgs (Max):
±30V
Power Dissipation (Max):
73W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
625 pF @ 25 V
Mounting Type:
Surface Mount
Series:
QFET®
Supplier Device Package:
TO-263 (D2PAK)
Current - Continuous Drain (Id) @ 25°C:
6A (Tc)
Technology:
MOSFET (Metal Oxide)
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The FQB6N40CTM is an N-Channel MOSFET that can handle a maximum voltage of 400V, making it suitable for high-voltage switching or power control applications. Its current rating of 6A at a case temperature (Tc) of 25°C signifies its capability to handle significant amounts of current flow. The surface-mount D2PAK (TO-263) package ensures easy installation and efficient thermal dissipation. Its surface-mount D2PAK package makes it easy to integrate into various electronic designs.
With a power dissipation of 73W at a case temperature of 25°C, the FQB6N40CTM can handle many power levels without compromising performance. This characteristic is crucial for applications where power management and heat dissipation are critical factors, ensuring the device operates reliably under demanding conditions.
The FQB6N40CTM features excellent switching characteristics, allowing it to transition between the on and off states swiftly. This high-speed switching capability benefits application requiring fast response times, such as switching power supplies, motor controls, and other high-frequency power conversion circuits.
One of the key attributes of the FQB6N40CTM is its low on-resistance. With an on-resistance of typically 0.6 Ohms, the MOSFET minimises power losses and improves overall efficiency. This feature reduces heat generation and increases energy efficiency in various power management applications.
Fairchild Semiconductor emphasises reliability in its devices, and the FQB6N40CTM is no exception. It incorporates various features such as over-temperature, over-current, and short-circuit protection, ensuring the device and the overall system remain safe and secure during operation.
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