Fairchild Semiconductor FDP8030L
Product Information
FET Feature:
-
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
2V @ 250µA
Operating Temperature:
-65°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
3.5mOhm @ 80A, 10V
Gate Charge (Qg) (Max) @ Vgs:
170 nC @ 5 V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/13516775
Package:
Bulk
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Power Dissipation (Max):
187W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
10500 pF @ 15 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220-3
Current - Continuous Drain (Id) @ 25°C:
80A (Ta)
ECCN:
EAR99
Technology:
MOSFET (Metal Oxide)
edacadModel:
FDP8030L Models
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Yes. We ship FDP8030L Internationally to many countries around the world.
This is manufactured by Fairchild Semiconductor. The manufacturer part number is FDP8030L. It is assigned with possible HTSUS value of 8542.39.0001. The typical Vgs (th) (max) of the product is 2v @ 250µa. The product has -65°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 3.5mohm @ 80a, 10v. The maximum gate charge and given voltages include 170 nc @ 5 v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in bulk package . The product has a 30 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 187w (tc). The product's input capacitance at maximum includes 10500 pf @ 15 v. The product is available in through hole configuration. to-220-3 is the supplier device package value. The continuous current drain at 25°C is 80a (ta). The product is designated with the ear99 code number. This product use mosfet (metal oxide) technology.
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