Fairchild Semiconductor FDFMA2P853

FDFMA2P853 Fairchild Semiconductor
Fairchild Semiconductor

Product Information

FET Feature:
Schottky Diode (Isolated)
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
1.3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-VDFN Exposed Pad
Rds On (Max) @ Id, Vgs:
120mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
6 nC @ 4.5 V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
edacadModelUrl:
/en/models/13477542
Package:
Bulk
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±8V
Power Dissipation (Max):
1.4W (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
435 pF @ 10 V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
6-MicroFET (2x2)
Current - Continuous Drain (Id) @ 25°C:
3A (Ta)
ECCN:
EAR99
Technology:
MOSFET (Metal Oxide)
edacadModel:
FDFMA2P853 Models
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This is manufactured by Fairchild Semiconductor. The manufacturer part number is FDFMA2P853. The FET features of the product include schottky diode (isolated). It is assigned with possible HTSUS value of 8542.39.0001. The typical Vgs (th) (max) of the product is 1.3v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-vdfn exposed pad. It has a maximum Rds On and voltage of 120mohm @ 3a, 4.5v. The maximum gate charge and given voltages include 6 nc @ 4.5 v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.8v, 4.5v. It is shipped in bulk package . The product has a 20 v drain to source voltage. The maximum Vgs rate is ±8v. The product carries maximum power dissipation 1.4w (ta). The product's input capacitance at maximum includes 435 pf @ 10 v. The product is available in surface mount configuration. The product powertrench®, is a highly preferred choice for users. 6-microfet (2x2) is the supplier device package value. The continuous current drain at 25°C is 3a (ta). The product is designated with the ear99 code number. This product use mosfet (metal oxide) technology.

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