Fairchild Semiconductor FDD8896-F085
Product Information
FET Feature:
-
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
60 nC @ 10 V
Rds On (Max) @ Id, Vgs:
5.7mOhm @ 35A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Bulk
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Power Dissipation (Max):
80W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2525 pF @ 15 V
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
PowerTrench®
Supplier Device Package:
TO-252 (DPAK)
Current - Continuous Drain (Id) @ 25°C:
17A (Ta), 94A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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FAQs
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Yes. We ship FDD8896-F085 Internationally to many countries around the world.
This is manufactured by Fairchild Semiconductor. The manufacturer part number is FDD8896-F085. It is assigned with possible HTSUS value of 8542.39.0001. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. The maximum gate charge and given voltages include 60 nc @ 10 v. It has a maximum Rds On and voltage of 5.7mohm @ 35a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in bulk package . The product has a 30 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 80w (tc). The product's input capacitance at maximum includes 2525 pf @ 15 v. The product is available in surface mount configuration. The product is automotive, a grade of class. The product powertrench®, is a highly preferred choice for users. to-252 (dpak) is the supplier device package value. The continuous current drain at 25°C is 17a (ta), 94a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
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