Fairchild Semiconductor FDB3672-F085
Product Information
FET Feature:
-
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
31 nC @ 10 V
Rds On (Max) @ Id, Vgs:
28mOhm @ 44A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Package:
Bulk
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Power Dissipation (Max):
120W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1710 pF @ 25 V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101, PowerTrench®
Supplier Device Package:
D2PAK (TO-263)
Current - Continuous Drain (Id) @ 25°C:
7.2A (Ta), 44A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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Yes. We ship FDB3672-F085 Internationally to many countries around the world.
This is manufactured by Fairchild Semiconductor. The manufacturer part number is FDB3672-F085. It is assigned with possible HTSUS value of 8542.39.0001. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. The maximum gate charge and given voltages include 31 nc @ 10 v. It has a maximum Rds On and voltage of 28mohm @ 44a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 6v, 10v. It is shipped in bulk package . The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 120w (tc). The product's input capacitance at maximum includes 1710 pf @ 25 v. The product is available in surface mount configuration. The product automotive, aec-q101, powertrench®, is a highly preferred choice for users. d2pak (to-263) is the supplier device package value. The continuous current drain at 25°C is 7.2a (ta), 44a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
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