Fairchild Semiconductor FDA16N50-F109
Product Information
FET Feature:
-
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-3P-3, SC-65-3
Gate Charge (Qg) (Max) @ Vgs:
45 nC @ 10 V
Rds On (Max) @ Id, Vgs:
380mOhm @ 8.3A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
500 V
Vgs (Max):
±30V
Power Dissipation (Max):
205W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1945 pF @ 25 V
Mounting Type:
Through Hole
Series:
UniFET™
Supplier Device Package:
TO-3PN
Current - Continuous Drain (Id) @ 25°C:
16.5A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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FAQs
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Yes. Our products in Transistors - FETs, MOSFETs - Single category are shipped in lowest possible time.
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Yes. We ship FDA16N50-F109 Internationally to many countries around the world.
This is manufactured by Fairchild Semiconductor. The manufacturer part number is FDA16N50-F109. It is assigned with possible HTSUS value of 8542.39.0001. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-3p-3, sc-65-3. The maximum gate charge and given voltages include 45 nc @ 10 v. It has a maximum Rds On and voltage of 380mohm @ 8.3a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 500 v drain to source voltage. The maximum Vgs rate is ±30v. The product carries maximum power dissipation 205w (tc). The product's input capacitance at maximum includes 1945 pf @ 25 v. The product is available in through hole configuration. The product unifet™, is a highly preferred choice for users. to-3pn is the supplier device package value. The continuous current drain at 25°C is 16.5a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
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