Fairchild Semiconductor FCPF4300N80Z
Product Information
FET Feature:
-
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
4.5V @ 160µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Gate Charge (Qg) (Max) @ Vgs:
8.8 nC @ 10 V
Rds On (Max) @ Id, Vgs:
4.3Ohm @ 800mA, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
800 V
Vgs (Max):
±20V
Power Dissipation (Max):
19.2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
355 pF @ 100 V
Mounting Type:
Through Hole
Series:
SuperFET® II
Supplier Device Package:
TO-220F-3
Current - Continuous Drain (Id) @ 25°C:
1.6A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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FAQs
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Yes. Our products in Transistors - FETs, MOSFETs - Single category are shipped in lowest possible time.
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Yes. We ship FCPF4300N80Z Internationally to many countries around the world.
This is manufactured by Fairchild Semiconductor. The manufacturer part number is FCPF4300N80Z. It is assigned with possible HTSUS value of 8542.39.0001. The typical Vgs (th) (max) of the product is 4.5v @ 160µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack. The maximum gate charge and given voltages include 8.8 nc @ 10 v. It has a maximum Rds On and voltage of 4.3ohm @ 800ma, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 800 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 19.2w (tc). The product's input capacitance at maximum includes 355 pf @ 100 v. The product is available in through hole configuration. The product superfet® ii, is a highly preferred choice for users. to-220f-3 is the supplier device package value. The continuous current drain at 25°C is 1.6a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
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