Fairchild Semiconductor FCP170N60

FCP170N60 Fairchild Semiconductor
Fairchild Semiconductor

Product Information

FET Feature:
-
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
3.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
170mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs:
55 nC @ 10 V
edacadModel:
FCP170N60 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/13514323
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±20V
Power Dissipation (Max):
227W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2860 pF @ 380 V
Mounting Type:
Through Hole
Series:
SuperFET® II
Supplier Device Package:
TO-220-3
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
22A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Fairchild Semiconductor. The manufacturer part number is FCP170N60. It is assigned with possible HTSUS value of 8542.39.0001. The typical Vgs (th) (max) of the product is 3.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 170mohm @ 11a, 10v. The maximum gate charge and given voltages include 55 nc @ 10 v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 600 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 227w (tc). The product's input capacitance at maximum includes 2860 pf @ 380 v. The product is available in through hole configuration. The product superfet® ii, is a highly preferred choice for users. to-220-3 is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 22a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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