Fairchild Semiconductor FCP130N60
Product Information
FET Feature:
-
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
3.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
130mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs:
70 nC @ 10 V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/13514904
Package:
Bulk
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±20V
Power Dissipation (Max):
278W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
3590 pF @ 380 V
Mounting Type:
Through Hole
Series:
SuperFET® II
Supplier Device Package:
TO-220-3
Current - Continuous Drain (Id) @ 25°C:
28A (Tc)
ECCN:
EAR99
Technology:
MOSFET (Metal Oxide)
edacadModel:
FCP130N60 Models
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FAQs
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Yes. Our products in Transistors - FETs, MOSFETs - Single category are shipped in lowest possible time.
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Yes. We ship FCP130N60 Internationally to many countries around the world.
This is manufactured by Fairchild Semiconductor. The manufacturer part number is FCP130N60. It is assigned with possible HTSUS value of 8542.39.0001. The typical Vgs (th) (max) of the product is 3.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 130mohm @ 14a, 10v. The maximum gate charge and given voltages include 70 nc @ 10 v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 600 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 278w (tc). The product's input capacitance at maximum includes 3590 pf @ 380 v. The product is available in through hole configuration. The product superfet® ii, is a highly preferred choice for users. to-220-3 is the supplier device package value. The continuous current drain at 25°C is 28a (tc). The product is designated with the ear99 code number. This product use mosfet (metal oxide) technology.
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