Fairchild Semiconductor FCH085N80-F155
Product Information
FET Feature:
-
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
4.5V @ 4.6mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
255 nC @ 10 V
Rds On (Max) @ Id, Vgs:
85mOhm @ 23A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
800 V
Vgs (Max):
±20V
Power Dissipation (Max):
446W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
10825 pF @ 100 V
Mounting Type:
Through Hole
Series:
SuperFET® II
Supplier Device Package:
TO-247-3
Current - Continuous Drain (Id) @ 25°C:
46A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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FAQs
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Yes. Our products in Transistors - FETs, MOSFETs - Single category are shipped in lowest possible time.
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Yes. We ship FCH085N80-F155 Internationally to many countries around the world.
This is manufactured by Fairchild Semiconductor. The manufacturer part number is FCH085N80-F155. It is assigned with possible HTSUS value of 8542.39.0001. The typical Vgs (th) (max) of the product is 4.5v @ 4.6ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-247-3. The maximum gate charge and given voltages include 255 nc @ 10 v. It has a maximum Rds On and voltage of 85mohm @ 23a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 800 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 446w (tc). The product's input capacitance at maximum includes 10825 pf @ 100 v. The product is available in through hole configuration. The product superfet® ii, is a highly preferred choice for users. to-247-3 is the supplier device package value. The continuous current drain at 25°C is 46a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
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