NXP Semiconductors BUK7Y20-30B,115
Product Information
FET Feature:
-
HTSUS:
0000.00.0000
Vgs(th) (Max) @ Id:
4V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
SC-100, SOT-669
Gate Charge (Qg) (Max) @ Vgs:
11.2 nC @ 10 V
Rds On (Max) @ Id, Vgs:
20mOhm @ 20A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Power Dissipation (Max):
59W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
688 pF @ 25 V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101, TrenchMOS™
Supplier Device Package:
LFPAK56, Power-SO8
Current - Continuous Drain (Id) @ 25°C:
39.5A (Tc)
Technology:
MOSFET (Metal Oxide)
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This is manufactured by NXP Semiconductors. The manufacturer part number is BUK7Y20-30B,115. It is assigned with possible HTSUS value of 0000.00.0000. The typical Vgs (th) (max) of the product is 4v @ 1ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in sc-100, sot-669. The maximum gate charge and given voltages include 11.2 nc @ 10 v. It has a maximum Rds On and voltage of 20mohm @ 20a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 30 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 59w (tc). The product's input capacitance at maximum includes 688 pf @ 25 v. The product is available in surface mount configuration. The product automotive, aec-q101, trenchmos™, is a highly preferred choice for users. lfpak56, power-so8 is the supplier device package value. The continuous current drain at 25°C is 39.5a (tc). This product use mosfet (metal oxide) technology.
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