NXP USA Inc. BUK661R8-30C,118
Product Information
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.8V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
168 nC @ 10 V
Rds On (Max) @ Id, Vgs:
1.9mOhm @ 25A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Bulk
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±16V
Power Dissipation (Max):
263W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
10918 pF @ 25 V
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
TrenchMOS™
Supplier Device Package:
D2PAK
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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Yes. We ship BUK661R8-30C,118 Internationally to many countries around the world.
This is manufactured by NXP USA Inc.. The manufacturer part number is BUK661R8-30C,118. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.8v @ 1ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. The maximum gate charge and given voltages include 168 nc @ 10 v. It has a maximum Rds On and voltage of 1.9mohm @ 25a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in bulk package . The product has a 30 v drain to source voltage. The maximum Vgs rate is ±16v. The product carries maximum power dissipation 263w (tc). The product's input capacitance at maximum includes 10918 pf @ 25 v. The product is available in surface mount configuration. The product is automotive, a grade of class. The product trenchmos™, is a highly preferred choice for users. d2pak is the supplier device package value. The continuous current drain at 25°C is 120a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
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