Fairchild Semiconductor BS170-D26Z
Product Information
FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
3V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
Rds On (Max) @ Id, Vgs:
5Ohm @ 200mA, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Power Dissipation (Max):
830mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
40 pF @ 10 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-92-3
Current - Continuous Drain (Id) @ 25°C:
500mA (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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FAQs
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Yes. We ship BS170-D26Z Internationally to many countries around the world.
This is manufactured by Fairchild Semiconductor. The manufacturer part number is BS170-D26Z. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 3v @ 1ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-226-3, to-92-3 (to-226aa) formed leads. The product is rohs3 compliant. In addition, it is reach unaffected. It has a maximum Rds On and voltage of 5ohm @ 200ma, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 60 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 830mw (ta). The product's input capacitance at maximum includes 40 pf @ 10 v. The product is available in through hole configuration. to-92-3 is the supplier device package value. The continuous current drain at 25°C is 500ma (ta). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
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