Maximum Drain Source Voltage:
80 V
Typical Gate Charge @ Vgs:
33 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
92.6 W
Maximum Gate Source Voltage:
±20 V
Maximum Gate Threshold Voltage:
2.5V
Channel Type:
N
Width:
6.15mm
Length:
5.1mm
Maximum Drain Source Resistance:
11.6 mΩ
Package Type:
PQFN
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
84 A
Minimum Gate Threshold Voltage:
1V
Forward Diode Voltage:
1.3V
Height:
1.05mm
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Rds On (Max) @ Id, Vgs:
6.7mOhm @ 21A, 10V
title:
FDMS007N08LC
Vgs(th) (Max) @ Id:
2.5V @ 120µA
REACH Status:
REACH Unaffected
edacadModel:
FDMS007N08LC Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/9764706
Drain to Source Voltage (Vdss):
80 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2.5W (Ta), 92.6W (Tc)
standardLeadTime:
20 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
3100 pF @ 40 V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Gate Charge (Qg) (Max) @ Vgs:
46 nC @ 10 V
Supplier Device Package:
8-PQFN (5x6)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
14A (Ta), 84A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDMS007
ECCN:
EAR99
