onsemi 2SJ652-1E
Product Information
Dimensions:
10.16 x 4.7 x 15.87mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
30 W
Package Type:
TO-220
Number of Elements per Chip:
1
Pin Count:
3
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
-
Operating Temperature:
150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs:
38mOhm @ 14A, 10V
edacadModel:
2SJ652-1E Models
Gate Charge (Qg) (Max) @ Vgs:
80 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
edacadModelUrl:
/en/models/4847484
Package:
Tube
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
4360 pF @ 20 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220F-3SG
Current - Continuous Drain (Id) @ 25°C:
28A (Ta)
Power Dissipation (Max):
2W (Ta), 30W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
2SJ652
ECCN:
EAR99
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We use our internationally recognized delivery partners UPS/DHL. Collection of ET21495372 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "onsemi" products on our website by using Enrgtech's Unique Manufacturing Part Number ET21495372.
Yes. We ship 2SJ652-1E Internationally to many countries around the world.
This is manufactured by onsemi. The manufacturer part number is 2SJ652-1E. The given dimensions of the product include 10.16 x 4.7 x 15.87mm. The product is available in through hole configuration. Provides up to 30 w maximum power dissipation. The package is a sort of to-220. It consists of 1 elements per chip. It contains 3 pins. It is assigned with possible HTSUS value of 8541.29.0095. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack. It has a maximum Rds On and voltage of 38mohm @ 14a, 10v. The maximum gate charge and given voltages include 80 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4v, 10v. It is shipped in tube package . The product has a 60 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 4360 pf @ 20 v. to-220f-3sg is the supplier device package value. The continuous current drain at 25°C is 28a (ta). The product carries maximum power dissipation 2w (ta), 30w (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to 2sj652, a base product number of the product. The product is designated with the ear99 code number.
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