Maximum Continuous Drain Current:
100 A
Width:
6.1mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
2.6V
Package Type:
DFN
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
160 nC @ 10 V
Channel Type:
P
Length:
5.1mm
Pin Count:
5
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
200 W
Maximum Gate Source Voltage:
±20 V
Height:
1.05mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.5V
Maximum Drain Source Resistance:
7.7 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerTDFN, 5 Leads
Rds On (Max) @ Id, Vgs:
7.7mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs:
160 nC @ 10 V
Vgs(th) (Max) @ Id:
2.6V @ 1mA
REACH Status:
REACH Unaffected
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3.8W (Ta), 200W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
7700 pF @ 20 V
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
-
Supplier Device Package:
5-DFN (5x6) (8-SOFL)
Current - Continuous Drain (Id) @ 25°C:
15A (Ta), 100A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NVMFS5
ECCN:
EAR99
This is P-Channel MOSFET 100 A 60 V 5-Pin DFN manufactured by onsemi. The manufacturer part number is NVMFS5A160PLZWFT1G. While 100 a of maximum continuous drain current. Furthermore, the product is 6.1mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The product carries 2.6v of maximum gate threshold voltage. The package is a sort of dfn. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 160 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 5.1mm. It contains 5 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 200 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. In addition, the height is 1.05mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.5v . It provides up to 7.7 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in 8-powertdfn, 5 leads. It has a maximum Rds On and voltage of 7.7mohm @ 50a, 10v. The maximum gate charge and given voltages include 160 nc @ 10 v. The typical Vgs (th) (max) of the product is 2.6v @ 1ma. In addition, it is reach unaffected. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 60 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 3.8w (ta), 200w (tc). The product's input capacitance at maximum includes 7700 pf @ 20 v. The product is automotive, a grade of class. 5-dfn (5x6) (8-sofl) is the supplier device package value. The continuous current drain at 25°C is 15a (ta), 100a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to nvmfs5, a base product number of the product. The product is designated with the ear99 code number.
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