N-Channel MOSFET, 10 A, 650 V, 3-Pin IPAK onsemi FCU360N65S3R0
Product Information
Maximum Continuous Drain Current:
10 A
Width:
2.5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
4.5V
Package Type:
IPAK
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
18 nC @ 10 V
Channel Type:
N
Length:
6.8mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
83 W
Maximum Gate Source Voltage:
±30 V
Height:
6.3mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
360 mΩ
Mounting Type:
Through Hole
HTSUS:
8541.29.0095
Package:
Tube
Series:
SuperFET® III
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
Moisture Sensitivity Level (MSL):
Not Applicable
Supplier Device Package:
IPAK
Current - Continuous Drain (Id) @ 25°C:
10A (Tc)
Base Product Number:
FCU360
Package / Case:
TO-251-3 Stub Leads, IPAK
ECCN:
EAR99
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FAQs
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You can order onsemi brand products with FCU360N65S3R0 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - FETs, MOSFETs - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of N-Channel MOSFET, 10 A, 650 V, 3-Pin IPAK onsemi FCU360N65S3R0. You can also check on our website or by contacting our customer support team for further order details on N-Channel MOSFET, 10 A, 650 V, 3-Pin IPAK onsemi FCU360N65S3R0.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET21479762 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "onsemi" products on our website by using Enrgtech's Unique Manufacturing Part Number ET21479762.
Yes. We ship FCU360N65S3R0 Internationally to many countries around the world.
This is N-Channel MOSFET 10 A 650 V 3-Pin IPAK manufactured by onsemi. The manufacturer part number is FCU360N65S3R0. While 10 a of maximum continuous drain current. Furthermore, the product is 2.5mm wide. The product offers single transistor configuration. It has a maximum of 650 v drain source voltage. The product carries 4.5v of maximum gate threshold voltage. The package is a sort of ipak. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 18 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.8mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 83 w maximum power dissipation. It features a maximum gate source voltage of ±30 v. In addition, the height is 6.3mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 360 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. It is shipped in tube package . The product superfet® iii, is a highly preferred choice for users. The product is rohs3 compliant. In addition, it is reach unaffected. Its typical moisture sensitivity level is not applicable. ipak is the supplier device package value. The continuous current drain at 25°C is 10a (tc). Moreover, it corresponds to fcu360, a base product number of the product. Moreover, the product comes in to-251-3 stub leads, ipak. The product is designated with the ear99 code number.
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