N-Channel MOSFET, 5 A, 30 V, 6-Pin SOT-23 onsemi FDC653N
Product Information
Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
12 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.6 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1mm
Width:
1.7mm
Length:
3mm
Minimum Gate Threshold Voltage:
1V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
5 A
Transistor Material:
Si
Maximum Drain Source Resistance:
56 mΩ
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Rds On (Max) @ Id, Vgs:
35mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
17 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
1.6W (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
350 pF @ 15 V
standardLeadTime:
22 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SuperSOT™-6
Current - Continuous Drain (Id) @ 25°C:
5A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDC653
ECCN:
EAR99
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FAQs
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Yes. We ship FDC653N Internationally to many countries around the world.
This is N-Channel MOSFET 5 A 30 V 6-Pin SOT-23 manufactured by onsemi. The manufacturer part number is FDC653N. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 12 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1.6 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1mm. Furthermore, the product is 1.7mm wide. Its accurate length is 3mm. Whereas its minimum gate threshold voltage includes 1v. The package is a sort of sot-23. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 56 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sot-23-6 thin, tsot-23-6. It has a maximum Rds On and voltage of 35mohm @ 5a, 10v. The maximum gate charge and given voltages include 17 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 30 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 1.6w (ta). The product's input capacitance at maximum includes 350 pf @ 15 v. It has a long 22 weeks standard lead time. supersot™-6 is the supplier device package value. The continuous current drain at 25°C is 5a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to fdc653, a base product number of the product. The product is designated with the ear99 code number.
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