P-Channel MOSFET, 11.4 A, 60 V, 3-Pin D2PAK onsemi FQB11P06TM
Product Information
Maximum Continuous Drain Current:
11.4 A
Transistor Material:
Si
Width:
9.65mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
13 nC @ 10 V
Channel Type:
P
Length:
10.67mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
53 W
Series:
QFET
Maximum Gate Source Voltage:
-25 V, +25 V
Height:
4.83mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
175 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
175mOhm @ 5.7A, 10V
Gate Charge (Qg) (Max) @ Vgs:
17 nC @ 10 V
Vgs(th) (Max) @ Id:
4V @ 250µA
REACH Status:
REACH Unaffected
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3.13W (Ta), 53W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
550 pF @ 25 V
Mounting Type:
Surface Mount
Series:
QFET®
Supplier Device Package:
TO-263 (D2PAK)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
11.4A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FQB11P06
ECCN:
EAR99
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FAQs
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This is P-Channel MOSFET 11.4 A 60 V 3-Pin D2PAK manufactured by onsemi. The manufacturer part number is FQB11P06TM. While 11.4 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 9.65mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 13 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.67mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 53 w maximum power dissipation. The product qfet, is a highly preferred choice for users. It features a maximum gate source voltage of -25 v, +25 v. In addition, the height is 4.83mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 175 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. It has a maximum Rds On and voltage of 175mohm @ 5.7a, 10v. The maximum gate charge and given voltages include 17 nc @ 10 v. The typical Vgs (th) (max) of the product is 4v @ 250µa. In addition, it is reach unaffected. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 60 v drain to source voltage. The maximum Vgs rate is ±25v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 3.13w (ta), 53w (tc). The product's input capacitance at maximum includes 550 pf @ 25 v. The product qfet®, is a highly preferred choice for users. to-263 (d2pak) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 11.4a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to fqb11p06, a base product number of the product. The product is designated with the ear99 code number.
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