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N-Channel MOSFET, 40 A, 30 V, 3-Pin DPAK onsemi FDD8878

FDD8878 N-Channel MOSFET, 40 A, 30 V, 3-Pin DPAK onsemi
onsemi

Product Information

Maximum Continuous Drain Current:
40 A
Transistor Material:
Si
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
19 nC @ 10 V
Channel Type:
N
Length:
6.73mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
40 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
2.39mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.25V
Maximum Drain Source Resistance:
24 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs:
15mOhm @ 35A, 10V
Gate Charge (Qg) (Max) @ Vgs:
26 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
40W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
880 pF @ 15 V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
TO-252AA
Current - Continuous Drain (Id) @ 25°C:
11A (Ta), 40A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDD887
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is N-Channel MOSFET 40 A 30 V 3-Pin DPAK manufactured by onsemi. The manufacturer part number is FDD8878. While 40 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6.22mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 19 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.73mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 40 w maximum power dissipation. The product powertrench, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 2.39mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.25v . It provides up to 24 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. It has a maximum Rds On and voltage of 15mohm @ 35a, 10v. The maximum gate charge and given voltages include 26 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 30 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 40w (tc). The product's input capacitance at maximum includes 880 pf @ 15 v. The product powertrench®, is a highly preferred choice for users. to-252aa is the supplier device package value. The continuous current drain at 25°C is 11a (ta), 40a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to fdd887, a base product number of the product. The product is designated with the ear99 code number.

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FDD8878 / FDU8878, N-Channel PowerTrench MOSFET 30V 40A 15mOhm Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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onsemi RoHS(Environmental Information)
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Mult Dev 13/Aug/2020(PCN Assembly/Origin)
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Description Chg 01/Apr/2016(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Dev EOL 8/Apr/2021(PCN Obsolescence/ EOL)
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FDD8878, FDU8878(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)
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Tape and Box/Reel Barcode Update 07/Aug/2014(PCN Packaging)

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You will get a confirmation email regarding your order of N-Channel MOSFET, 40 A, 30 V, 3-Pin DPAK onsemi FDD8878. You can also check on our website or by contacting our customer support team for further order details on N-Channel MOSFET, 40 A, 30 V, 3-Pin DPAK onsemi FDD8878.
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