N-Channel MOSFET, 2.8 A, 60 V, 3 + Tab-Pin SOT-223 onsemi FQT13N06TF
Product Information
Maximum Continuous Drain Current:
2.8 A
Transistor Material:
Si
Width:
3.56mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Package Type:
SOT-223
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
5.8 nC @ 10 V
Channel Type:
N
Length:
6.5mm
Pin Count:
3 + Tab
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2.1 W
Series:
QFET
Maximum Gate Source Voltage:
-25 V, +25 V
Height:
1.6mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
140 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-261-4, TO-261AA
Rds On (Max) @ Id, Vgs:
140mOhm @ 1.4A, 10V
edacadModel:
FQT13N06TF Models
Gate Charge (Qg) (Max) @ Vgs:
7.5 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/1053473
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2.1W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
310 pF @ 25 V
Mounting Type:
Surface Mount
Series:
QFET®
Supplier Device Package:
SOT-223-4
Current - Continuous Drain (Id) @ 25°C:
2.8A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FQT13N06
ECCN:
EAR99
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FAQs
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Yes. Our products in Transistors - FETs, MOSFETs - Single category are shipped in lowest possible time.
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This is N-Channel MOSFET 2.8 A 60 V 3 + Tab-Pin SOT-223 manufactured by onsemi. The manufacturer part number is FQT13N06TF. While 2.8 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.56mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The package is a sort of sot-223. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 5.8 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.5mm. It contains 3 + tab pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 2.1 w maximum power dissipation. The product qfet, is a highly preferred choice for users. It features a maximum gate source voltage of -25 v, +25 v. In addition, the height is 1.6mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 140 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-261-4, to-261aa. It has a maximum Rds On and voltage of 140mohm @ 1.4a, 10v. The maximum gate charge and given voltages include 7.5 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tape & reel (tr) package . The product has a 60 v drain to source voltage. The maximum Vgs rate is ±25v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 2.1w (tc). The product's input capacitance at maximum includes 310 pf @ 25 v. The product qfet®, is a highly preferred choice for users. sot-223-4 is the supplier device package value. The continuous current drain at 25°C is 2.8a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to fqt13n06, a base product number of the product. The product is designated with the ear99 code number.
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