N-Channel MOSFET, 116 A, 40 V, 3-Pin D2PAK ON Semiconductor NTB5405NT4G
Product Information
Maximum Drain Source Voltage:
40 V
Typical Gate Charge @ Vgs:
88 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
150 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
3.5V
Height:
4.83mm
Width:
9.65mm
Length:
10.29mm
Maximum Drain Source Resistance:
8 mΩ
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
116 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
5.8mOhm @ 40A, 10V
edacadModel:
NTB5405NT4G Models
Gate Charge (Qg) (Max) @ Vgs:
88 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
edacadModelUrl:
/en/models/1792933
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3W (Ta), 150W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
4000 pF @ 32 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
D2PAK
Current - Continuous Drain (Id) @ 25°C:
116A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTB5405
ECCN:
EAR99
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This is N-Channel MOSFET 116 A 40 V 3-Pin D2PAK ON Semiconductor manufactured by onsemi. The manufacturer part number is NTB5405NT4G. It has a maximum of 40 v drain source voltage. With a typical gate charge at Vgs includes 88 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 150 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 3.5v of maximum gate threshold voltage. In addition, the height is 4.83mm. Furthermore, the product is 9.65mm wide. Its accurate length is 10.29mm. It provides up to 8 mω maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 116 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 3.5v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. It has a maximum Rds On and voltage of 5.8mohm @ 40a, 10v. The maximum gate charge and given voltages include 88 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 5v, 10v. It is shipped in tape & reel (tr) package . The product has a 40 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 3w (ta), 150w (tc). The product's input capacitance at maximum includes 4000 pf @ 32 v. d2pak is the supplier device package value. The continuous current drain at 25°C is 116a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ntb5405, a base product number of the product. The product is designated with the ear99 code number.
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