N-Channel MOSFET, 5 A, 1500 V, 3-Pin TO-220F ON Semiconductor NDFP03N150CG
Product Information
Maximum Drain Source Voltage:
1500 V
Typical Gate Charge @ Vgs:
34 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
32 W
Maximum Gate Source Voltage:
-30 V, +30 V
Maximum Gate Threshold Voltage:
4V
Height:
4.7mm
Width:
10.16mm
Length:
28.85mm
Maximum Drain Source Resistance:
10.5 Ω
Package Type:
TO-220F
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
5 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs:
10.5Ohm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs:
34 nC @ 10 V
Vgs(th) (Max) @ Id:
-
REACH Status:
REACH Unaffected
edacadModel:
NDFP03N150CG Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/4707770
Drain to Source Voltage (Vdss):
1500 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2W (Ta), 32W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
650 pF @ 30 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220-3
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
2.5A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NDFP03
ECCN:
EAR99
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This is N-Channel MOSFET 5 A 1500 V 3-Pin TO-220F ON Semiconductor manufactured by onsemi. The manufacturer part number is NDFP03N150CG. It has a maximum of 1500 v drain source voltage. With a typical gate charge at Vgs includes 34 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 32 w maximum power dissipation. It features a maximum gate source voltage of -30 v, +30 v. The product carries 4v of maximum gate threshold voltage. In addition, the height is 4.7mm. Furthermore, the product is 10.16mm wide. Its accurate length is 28.85mm. It provides up to 10.5 ω maximum drain source resistance. The package is a sort of to-220f. It consists of 1 elements per chip. While 5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack. It has a maximum Rds On and voltage of 10.5ohm @ 1a, 10v. The maximum gate charge and given voltages include 34 nc @ 10 v. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 1500 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 2w (ta), 32w (tc). The product's input capacitance at maximum includes 650 pf @ 30 v. to-220-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 2.5a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ndfp03, a base product number of the product. The product is designated with the ear99 code number.
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