Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
34 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
40 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2.6V
Height:
1.5mm
Width:
7.3mm
Length:
6.5mm
Maximum Drain Source Resistance:
31 mΩ
Package Type:
ATPAK
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
40 A
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
-
Operating Temperature:
150°C (TJ)
Package / Case:
ATPAK (2 Leads+Tab)
Rds On (Max) @ Id, Vgs:
18.5mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs:
34 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
40W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1490 pF @ 10 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
ATPAK
Current - Continuous Drain (Id) @ 25°C:
40A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
ATP102
ECCN:
EAR99
This is P-Channel MOSFET 40 A 30 V 3-Pin ATPAK ON Semiconductor manufactured by onsemi. The manufacturer part number is ATP102-TL-H. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 34 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 40 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 2.6v of maximum gate threshold voltage. In addition, the height is 1.5mm. Furthermore, the product is 7.3mm wide. Its accurate length is 6.5mm. It provides up to 31 mω maximum drain source resistance. The package is a sort of atpak. It consists of 1 elements per chip. While 40 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.29.0095. The product has 150°c (tj) operating temperature range. Moreover, the product comes in atpak (2 leads+tab). It has a maximum Rds On and voltage of 18.5mohm @ 20a, 10v. The maximum gate charge and given voltages include 34 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 30 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 40w (tc). The product's input capacitance at maximum includes 1490 pf @ 10 v. atpak is the supplier device package value. The continuous current drain at 25°C is 40a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to atp102, a base product number of the product. The product is designated with the ear99 code number.
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