N-Channel MOSFET, 6 A, 35 V, 6-Pin CPH ON Semiconductor CPH6443-TL-W
Product Information
Maximum Continuous Drain Current:
6 A
Transistor Material:
Si
Width:
1.6mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
35 V
Maximum Gate Threshold Voltage:
2.6V
Package Type:
CPH
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
10 nC @ 10 V
Channel Type:
N
Length:
2.9mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.6 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.9mm
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
73 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.6V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Rds On (Max) @ Id, Vgs:
37mOhm @ 3A, 10V
edacadModel:
CPH6443-TL-W Models
Gate Charge (Qg) (Max) @ Vgs:
10 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
edacadModelUrl:
/en/models/5845542
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
35 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
470 pF @ 20 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
6-CPH
Current - Continuous Drain (Id) @ 25°C:
6A (Ta)
Power Dissipation (Max):
1.6W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CPH6443
ECCN:
EAR99
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FAQs
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This is N-Channel MOSFET 6 A 35 V 6-Pin CPH ON Semiconductor manufactured by onsemi. The manufacturer part number is CPH6443-TL-W. While 6 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.6mm wide. The product offers single transistor configuration. It has a maximum of 35 v drain source voltage. The product carries 2.6v of maximum gate threshold voltage. The package is a sort of cph. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 10 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 2.9mm. It contains 6 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 1.6 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 0.9mm. Its forward diode voltage is 1.2v . It provides up to 73 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.6v @ 1ma. The product has 150°c (tj) operating temperature range. Moreover, the product comes in sot-23-6 thin, tsot-23-6. It has a maximum Rds On and voltage of 37mohm @ 3a, 10v. The maximum gate charge and given voltages include 10 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4v, 10v. It is shipped in tape & reel (tr) package . The product has a 35 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 470 pf @ 20 v. 6-cph is the supplier device package value. The continuous current drain at 25°C is 6a (ta). The product carries maximum power dissipation 1.6w (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to cph6443, a base product number of the product. The product is designated with the ear99 code number.
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