N-Channel MOSFET, 220 A, 60 V, 3-Pin D2PAK onsemi NVB5860NT4G
Product Information
Maximum Continuous Drain Current:
220 A
Transistor Material:
Si
Width:
9.65mm
Transistor Configuration:
Single
Priced to Clear:
Yes
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
4V
Package Type:
D2PAK
Number of Elements per Chip:
1
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
180 nC @ 10 V
Channel Type:
N
Length:
10.29mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
283 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
4.83mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
3 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
3mOhm @ 75A, 10V
edacadModel:
NVB5860NT4G Models
Gate Charge (Qg) (Max) @ Vgs:
180 nC @ 10 V
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/4848887
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
283W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
10760 pF @ 25 V
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
-
Supplier Device Package:
D2PAK
Current - Continuous Drain (Id) @ 25°C:
220A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NVB586
ECCN:
EAR99
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FAQs
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Yes. We ship NVB5860NT4G Internationally to many countries around the world.
This is N-Channel MOSFET 220 A 60 V 3-Pin D2PAK manufactured by onsemi. The manufacturer part number is NVB5860NT4G. While 220 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 9.65mm wide. The product offers single transistor configuration. Priced to Clear Options - yes. It has a maximum of 60 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of d2pak. It consists of 1 elements per chip. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 180 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.29mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 283 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 4.83mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 3 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. It has a maximum Rds On and voltage of 3mohm @ 75a, 10v. The maximum gate charge and given voltages include 180 nc @ 10 v. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tape & reel (tr) package . The product has a 60 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 283w (tc). The product's input capacitance at maximum includes 10760 pf @ 25 v. The product is automotive, a grade of class. d2pak is the supplier device package value. The continuous current drain at 25°C is 220a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to nvb586, a base product number of the product. The product is designated with the ear99 code number.
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