Maximum Drain Source Voltage:
1500 V
Typical Gate Charge @ Vgs:
34 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
50 W
Maximum Gate Source Voltage:
-30 V, +30 V
Maximum Gate Threshold Voltage:
4V
Height:
5.5mm
Width:
15.5mm
Length:
43.8mm
Maximum Drain Source Resistance:
10.5 Ω
Package Type:
TO-3PF
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
5 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
-
Operating Temperature:
150°C (TJ)
Package / Case:
TO-3PL
Rds On (Max) @ Id, Vgs:
10.5Ohm @ 1.25A, 10V
Gate Charge (Qg) (Max) @ Vgs:
34 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
1500 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3W (Ta), 50W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
650 pF @ 30 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-3P(L)
Current - Continuous Drain (Id) @ 25°C:
2.5A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NDUL03
ECCN:
EAR99
This is N-Channel MOSFET 5 A 1500 V 3-Pin TO-3PF manufactured by onsemi. The manufacturer part number is NDUL03N150CG. It has a maximum of 1500 v drain source voltage. With a typical gate charge at Vgs includes 34 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 50 w maximum power dissipation. It features a maximum gate source voltage of -30 v, +30 v. The product carries 4v of maximum gate threshold voltage. In addition, the height is 5.5mm. Furthermore, the product is 15.5mm wide. Its accurate length is 43.8mm. It provides up to 10.5 ω maximum drain source resistance. The package is a sort of to-3pf. It consists of 1 elements per chip. While 5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.29.0095. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-3pl. It has a maximum Rds On and voltage of 10.5ohm @ 1.25a, 10v. The maximum gate charge and given voltages include 34 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 1500 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 3w (ta), 50w (tc). The product's input capacitance at maximum includes 650 pf @ 30 v. to-3p(l) is the supplier device package value. The continuous current drain at 25°C is 2.5a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ndul03, a base product number of the product. The product is designated with the ear99 code number.
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