Maximum Drain Source Voltage:
40 V
Typical Gate Charge @ Vgs:
19 nC @ 5 V, 35 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
5 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.575mm
Width:
3.9mm
Length:
4.9mm
Minimum Gate Threshold Voltage:
1V
Package Type:
SOIC
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
10.8 A
Transistor Material:
Si
Maximum Drain Source Resistance:
19.9 mΩ
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
13mOhm @ 10.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
49 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
5W (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
2670 pF @ 20 V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
8-SOIC
Current - Continuous Drain (Id) @ 25°C:
10.8A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDS41
ECCN:
EAR99
This is P-Channel MOSFET 10.8 A 40 V 8-Pin SOIC manufactured by onsemi. The manufacturer part number is FDS4141. It has a maximum of 40 v drain source voltage. With a typical gate charge at Vgs includes 19 nc @ 5 v, 35 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 5 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.575mm. Furthermore, the product is 3.9mm wide. Its accurate length is 4.9mm. Whereas its minimum gate threshold voltage includes 1v. The package is a sort of soic. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 10.8 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 19.9 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 13mohm @ 10.5a, 10v. The maximum gate charge and given voltages include 49 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 40 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 5w (ta). The product's input capacitance at maximum includes 2670 pf @ 20 v. The product powertrench®, is a highly preferred choice for users. 8-soic is the supplier device package value. The continuous current drain at 25°C is 10.8a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to fds41, a base product number of the product. The product is designated with the ear99 code number.
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