P-Channel MOSFET, 70 A, 60 V, 3-Pin ATPAK onsemi ATP302-TL-H
Product Information
Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
115 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
70 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2.6V
Height:
1.5mm
Width:
7.3mm
Length:
6.5mm
Maximum Drain Source Resistance:
18 mΩ
Package Type:
ATPAK
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
70 A
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
150°C (TJ)
Package / Case:
ATPAK (2 Leads+Tab)
Rds On (Max) @ Id, Vgs:
13mOhm @ 35A, 10V
Gate Charge (Qg) (Max) @ Vgs:
115 nC @ 10 V
Vgs(th) (Max) @ Id:
-
REACH Status:
REACH Unaffected
edacadModel:
ATP302-TL-H Models
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/2748088
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
5400 pF @ 20 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
ATPAK
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
70A (Ta)
Power Dissipation (Max):
70W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
ATP302
ECCN:
EAR99
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FAQs
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Yes. We ship ATP302-TL-H Internationally to many countries around the world.
This is P-Channel MOSFET 70 A 60 V 3-Pin ATPAK manufactured by onsemi. The manufacturer part number is ATP302-TL-H. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 115 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 70 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 2.6v of maximum gate threshold voltage. In addition, the height is 1.5mm. Furthermore, the product is 7.3mm wide. Its accurate length is 6.5mm. It provides up to 18 mω maximum drain source resistance. The package is a sort of atpak. It consists of 1 elements per chip. While 70 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has 150°c (tj) operating temperature range. Moreover, the product comes in atpak (2 leads+tab). It has a maximum Rds On and voltage of 13mohm @ 35a, 10v. The maximum gate charge and given voltages include 115 nc @ 10 v. In addition, it is reach unaffected. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product has a 60 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 5400 pf @ 20 v. atpak is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 70a (ta). The product carries maximum power dissipation 70w (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to atp302, a base product number of the product. The product is designated with the ear99 code number.
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