Maximum Drain Source Voltage:
1700 V
Typical Gate Charge @ Vgs:
48 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
55 W
Maximum Gate Source Voltage:
+30 V
Maximum Gate Threshold Voltage:
4V
Height:
24.5mm
Width:
5.5mm
Length:
15.5mm
Maximum Drain Source Resistance:
10.5 Ω
Package Type:
TO-3PF
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
3 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
-
Operating Temperature:
150°C (TJ)
Package / Case:
TO-3P-3 Full Pack
Rds On (Max) @ Id, Vgs:
10.5Ohm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
48 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
1700 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3W (Ta), 55W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
850 pF @ 30 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-3PF
Current - Continuous Drain (Id) @ 25°C:
2.5A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
WPH4003
ECCN:
EAR99
This is N-Channel MOSFET 3 A 1700 V 3-Pin TO-3PF manufactured by onsemi. The manufacturer part number is WPH4003-1E. It has a maximum of 1700 v drain source voltage. With a typical gate charge at Vgs includes 48 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 55 w maximum power dissipation. It features a maximum gate source voltage of +30 v. The product carries 4v of maximum gate threshold voltage. In addition, the height is 24.5mm. Furthermore, the product is 5.5mm wide. Its accurate length is 15.5mm. It provides up to 10.5 ω maximum drain source resistance. The package is a sort of to-3pf. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 3 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.29.0095. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-3p-3 full pack. It has a maximum Rds On and voltage of 10.5ohm @ 1.5a, 10v. The maximum gate charge and given voltages include 48 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 1700 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 3w (ta), 55w (tc). The product's input capacitance at maximum includes 850 pf @ 30 v. to-3pf is the supplier device package value. The continuous current drain at 25°C is 2.5a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to wph4003, a base product number of the product. The product is designated with the ear99 code number.
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