This is manufactured by ON Semiconductor. The manufacturer part number is NTMT190N65S3HF. It has a maximum Rds On and voltage of 190mohm @ 10a, 10v. It features n-channel 650v 20a (tc) 162w (tc) surface mount 4-pqfn (8x8). The product's input capacitance at maximum includes 1610pf @ 400v. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 5v @ 430µa. The product superfet® iii, frfet®, is a highly preferred choice for users. The maximum Vgs rate is ±30v. The maximum gate charge and given voltages include 34nc @ 10v. 4-pqfn (8x8) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in 4-powertsfn. The product carries maximum power dissipation 162w (tc). The product has a 650v drain to source voltage. The continuous current drain at 25°C is 20a (tc). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.
NTMT190N65S3HF(Datasheets)
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This is manufactured by ON Semiconductor. The manufacturer part number is NTMT190N65S3HF. It has a maximum Rds On and voltage of 190mohm @ 10a, 10v. It features n-channel 650v 20a (tc) 162w (tc) surface mount 4-pqfn (8x8). The product's input capacitance at maximum includes 1610pf @ 400v. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 5v @ 430µa. The product superfet® iii, frfet®, is a highly preferred choice for users. The maximum Vgs rate is ±30v. The maximum gate charge and given voltages include 34nc @ 10v. 4-pqfn (8x8) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in 4-powertsfn. The product carries maximum power dissipation 162w (tc). The product has a 650v drain to source voltage. The continuous current drain at 25°C is 20a (tc). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.
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Don’t hesitate to ask questions for better clarification.